6425 TGL6425-SCC digital attenuator l 0.5 to 18- ghz fr equency range l 5- bit step attenuator l 15.5 - db attenuation range l 4 - db t ypical inser tion loss l 1.6:1 input/output swr l 2,1844 x 1,8288 x 0,1016 mm (0.086 x 0.072 x 0.004 in.) the triquint TGL6425-SCC is a gaas mmic 5- bit fet attenuator which operates fr om 0.5 to 18-ghz. the attenuation step is 0.5- db and is controlled by 10 input lines. control bias voltages are 0 v and - 5 v. the input and output r eturn loss is typically 13 - db. this unique absorptive design combines both ? and ?i configurations to produce an extremely small size and low inser tion loss attenuator. the small size and reliability advantage of a monolithic attenuator over a hybrid design make this device attractive for use in electronic war fare, radar, telecommunication, and navigation systems for level set, modulation and switching functions. bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment method as well as the thermocompression and thermosonic wire bonding processes. ground is provided to the circuitry through vias to the backside metallization. photo enlargement description triquint semiconductor, inc. texas facilities (972) 994-8465 ?www.triquint.com t r i q u i n t s e m i c o n d u c t o r , i n c .
TGL6425-SCC 2 typical attenuation -25 -20 -15 -10 -5 0 024681012141618 frequency (ghz ) attenuation (db) attenuation state: typical input power p 1db 0 5 10 15 20 25 30 35 0369121518 frequency (ghz ) input power (dbm) attenuation state: typical input return loss 7 13 19 25 31 37 43 0369121518 frequency (ghz ) input return loss (db) attenuation state: t a = 25?c 0 db 2 db 4 db 8 db 15.5 db t a = 25?c 0 db 2 db 4 db 8 db 15.5 db t = 25?c 0 db 2 db 4 db 8 db 15.5 db triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
TGL6425-SCC 3 typical output return loss 0 6 12 18 24 30 36 0369121518 frequency (ghz ) output return loss (db) 0db 2db 4db 8db 15.5db attenuation state: absolute maximum ratings input continuous wave power , p in .......................................................................................................... 1 w contr ol voltage range, v1, v2, v3, v4, v5, v6, v7, v8, v9, v10 ................................................ - 10 v to 0 v operating channel temperature, t ch * ................................................................................................ 150 ? c mounting temperature (30 sec), t m ............................................................ ........................................ 320 ? c storage temperature range, t stg ............................................................................................ - 65 to 150 ? c ratings over operating channel temperature range, t ch (unless otherwise noted) stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are str ess ratings only and functional operation of the device at these or any other conditions beyond those indicated under rf characteristics is not implied. exposure to absolute maximum rated conditions for extended periods may af fect device reliability. *operating channel temperature, t ch , will directly affect the device mttf . for maximum life, it is recommended that channel temperature be maintained at the lowest possible level. rf characteristics parameter test conditions typical unit attenuation see next table db swr(in) input standing wave ratio f = 2 - 18 ghz (all states) 1.6:1 - swr(out) output standing wave ratio f = 2 - 18 ghz (all states) 1.4:1 - p 1db (in) input power at 1 - db gain compression see next table dbm t a = 25?c t a = 25?c triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
TGL6425-SCC 4 bias truth table atten state v 1 v 2 v 3 v 4 v 5 v 6 v 7 v 8 v 9 v 10 (db) 0.0-50-5-5-50000-5 0.5-50-5-5-500000 1.0 -5 0 -5 -5 0 0 -5 -5 0 -5 1.5 -5 0 -5 -5 0 0 -5 -5 0 0 2.0-50-50-5-500-5-5 2.5-50-50-5-500-50 3.0 -5 0 -5 0 0 -5 0 -5 -5 -5 3.5 -5 0 -5 0 0 -5 0 -5 -5 0 4.0-5 00-5-5-5-5 00-5 4.5-5 00-5-5-5-5 000 5.0-500-50-5-50-5-5 5.5-500-50-5-50-50 6.0 -5 0 0 0 -5 -5 -5 -5 0 - 5 6.5 -5 0 0 0 -5 -5 -5 -5 0 0 7.0-50000-5-5-5-5-5 7.5-50000-5-5-5-50 8.00-5-5-5-50000-5 8.50-5-5-5-500000 9.0 0 -5 -5 -5 0 0 -5 -5 0 -5 9.5 0 -5 -5 -5 0 0 -5 -5 0 0 10.0 0 - 5 - 5 0 - 5 - 5 0 0 - 5 - 5 10.5 0 - 5 - 5 0 - 5 - 5 0 0 - 5 0 11.0 0 - 5 - 5 0 0 - 5 0 - 5 - 5 - 5 11.5 0 - 5 - 5 0 0 - 5 0 - 5 - 5 0 12.0 0 - 5 0 - 5 - 5 - 5 - 5 0 0 - 5 12.5 0 - 5 0 - 5 - 5 - 5 - 5 0 0 0 13.0 0 - 5 0 - 5 0 - 5 - 5 0 - 5 - 5 13.5 0 - 5 0 - 5 0 - 5 - 5 0 - 5 0 14.0 0 - 5 0 0 - 5 - 5 - 5 - 5 0 - 5 14.5 0 - 5 0 0 - 5 - 5 - 5 - 5 0 0 15.0 0 - 5 0 0 0 - 5 - 5 - 5 - 5 - 5 15.5 0 - 5 0 0 0 - 5 - 5 - 5 - 5 0 attenuation typical typical input power state variance at 1edb gain compression (db) typical attenuation at 9 ghz (db) at 9 ghz (db) 2-18 ghz (dbm) 0 3.6 0.25 28 0.5 4.1 0.25 28 1 4.4 0.25 29 2 5.7 0.25 29 4 7.6 0.25 29 8 12.1 0.45 20 15.5 19.7 0.7 20 rf characteristics triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
TGL6425-SCC 5 equivalent schematic v 10 v 9 v 8 v 7 v 6 v 5 v 4 v 3 v 2 v 1 rf output rf input 2 - 290mm 2 - 62mm 2 - 32mm 2 - 16mm 2 - 30mm 2 - 16mm 2 - 32mm 2 - 62mm 2 - 50mm 2 - 55mm 2 - 70mm 2 - 186mm 100mm bias network 1 3 245 rf input rf output tgl6425 6 7 11 12 10 9 8 v 1 v 2 v 3 v 5 v 10 v 9 v 8 v 6 v 7 v 4 all bias r esistors have a nominal value of 25 - ohms. rf connections: bond using two 1-mil diameter , 20 to 25-mil- length gold bond wires at both rf input and rf output for optimum rf per formance. dc blocks are not provided at rf ports. close placement of external components is essential to resonant-free performance. triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
TGL6425-SCC 6 mechanical drawing 1,3970 (0.055) 2,0396 (0.0803) 1,0592 (0.0417) 2,1844 (0.0860) 1,7145 (0.0675) 1,3691 (0.0539) 1,1049 (0.0435) 0,8077 (0.0318) 0,5029 (0.0198) 0.0 0.0 0,1880 (0.0074) 1,0592 (0.0417) 1,6358 (0.0644) 1,8288 (0.0720) 1 23456 7 8 9 10 11 12 units: millimeters (inches) thickness: 0,102 (0.004) (reference only) chip edge to bond pad dimensions are shown to center of bond pad. chip size 0,0508 (0.002) bond pad #1 (rf in): 0,127 x 0,207 (0.0050 x 0.0082) bond pad #7 (rf out): 0,246 x 0,119 (0.0097 x 0.0047) bond pad #2 (v 1 ): 0,120 x 0,120 (0.0047 x 0.0047) bond pad #8 (v 4 ): 0,120 x 0,120 (0.0047 x 0.0047) bond pad #3 (v 3 ): 0,120 x 0,120 (0.0047 x 0.0047) bond pad #9 (v 7 ): 0,120 x 0,120 (0.0047 x 0.0047) bond pad #4 (v 2 ): 0,120 x 0,120 (0.0047 x 0.0047) bond pad 1#0 (v 6 ): 0,120 x 0,120 (0.0047 x 0.0047) bond pad #5 (v 5 ): 0,120 x 0,120 (0.0047 x 0.0047) bond pad #11 (v 8 ): 0,120 x 0,120 (0.0047 x 0.0047) bond pad #6 (v 10 ): 0,120 x 0,120 (0.0047 x 0.0047) bond pad #12 (v 9 ): 0,120 x 0,120 (0.0047 x 0.0047) triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
7 TGL6425-SCC application notes: suggested driver cir cuit overview driver circuit schematic the following is a suggested driver circuit for the triquint tgl6425-ssc 0.5 to 18 - ghz step attenuator. the circuit allows the user to use a digital binary input to achieve the desir ed level of attenuation; with a digital wor d of 00000 equaling0 -db relative attenuation and 11111 equaling 15.5- db relative attenuation. the jfet s (2n5116 or equivalent) provide the r equired level shift from ttl voltages to attenuation control levels. the 2 - input nor gates should be cmos (74c02 or equivalent) with 0 v applied to the positive supply terminal and - 5 v on the negative supply terminal. ~ 5k ohms triquint semiconductor, inc. texas facilities (972) 995-8465 www.triquint.com
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